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this is information on a product in full production. april 2013 docid024348 rev 3 1/20 20 stb13n80k5, stf13n80k5, STP13N80K5 n-channel 800 v, 0.37 ? , 12 a zener-protected supermesh? 5 power mosfet in d2pak, to-220fp and to-220 packages datasheet - production data figure 1. internal schematic diagram features ? worldwide best fom (figure of merit) ? ultra low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel zener-protected power mosfets realized in supermesh? 5, a revolutionary avalanche-rugged very high voltage power mosfet technology based on an innovative proprietary vertical structure. the result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. to-220 1 2 3 tab 1 2 3 to-220fp 1 3 tab d 2 pak d(2, tab) g(1) s(3) am01476v1 order codes v dss r ds(on) i d p tot stb13n80k5 800 v < 0.45 ? 12 a 190 w stf13n80k5 800 v < 0.45 ? 12 a 35 w STP13N80K5 800 v < 0.45 ? 12 a 190 w table 1. device summary order codes marking packages packaging stb13n80k5 13n80k5 d2pak tape and reel stf13n80k5 13n80k5 to-220fp tube STP13N80K5 13n80k5 to-220 tube www.st.com
contents stb13n80k5, stf13n80k5, STP13N80K5 2/20 docid024348 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
docid024348 rev 3 3/20 stb13n80k5, stf13n80k5, STP13N80K5 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d2pak, to-220 to-220fp v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 c 12 12 (1) 1. limited by package. a i d drain current (continuous) at t c = 100 c 7.6 7.6 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 48 48 (1) a p tot total dissipation at t c = 25 c 190 35 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 4a e as single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) 148 mj v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v dv/dt (3) 3. i sd 12 a, di/dt 100 a/s, v peak v (br)dss peak diode recovery voltage slope 4.5 v/ns dv/dt (4) 4. v ds 640 v mosfet dv/dt ruggedness 50 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit d2pak to-220 to-220fp rthj-case thermal resistance junction-case max 0.66 3.57 c/w rthj-amb thermal resistance junction-amb max 62.5 rthj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu. thermal resistance junction-pcb max 30
electrical characteristics stb13n80k5, stf13n80k5, STP13N80K5 4/20 docid024348 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 800 v i dss zero gate voltage drain current (v gs = 0) v ds = 800 v v ds = 800 v, tc=125 c 1 50 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 6 a 0.37 0.45 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 -870- pf c oss output capacitance - 50 - pf c rss reverse transfer capacitance -2-pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 640 v -110- pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -43-pf r g intrinsic gate resistance f = 1mhz, i d =0 - 5 - q g total gate charge v dd = 640 v, i d = 12 a v gs =10 v (see figure 20 ) -29-nc q gs gate-source charge - 7 nc q gd gate-drain charge - 18 nc
docid024348 rev 3 5/20 stb13n80k5, stf13n80k5, STP13N80K5 electrical characteristics the built-in back-to-back zener diodes have been specifically designed to enhance not only the device?s esd capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. in this respect, the zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. the integrated zener diodes thus eliminate the need for external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 400 v, i d = 6a, r g =4.7 , v gs =10 v (see figure 22 ) -16-ns t r rise time - 16 - ns t d(off) turn-off delay time - 42 - ns t f fall time - 16 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 14 a i sdm source-drain current (pulsed) - 56 a v sd (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 12 a, v gs =0 - 1.5 v t rr reverse recovery time i sd = 12 a, v dd = 60 v di/dt = 100 a/s, (see figure 21 ) - 406 ns q rr reverse recovery charge - 5.7 c i rrm reverse recovery current - 28 a t rr reverse recovery time i sd = 12 a,v dd = 60 v di/dt=100 a/s, tj=150 c (see figure 21 ) - 600 ns q rr reverse recovery charge - 7.9 c i rrm reverse recovery current - 26 a table 8. gate-source zener diode symbol parameter test conditions min. typ. max unit v (br)gso gate-source breakdown voltage i gs = 1ma, i d = 0 30 - - v
electrical characteristics stb13n80k5, stf13n80k5, STP13N80K5 6/20 docid024348 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for d 2 pak figure 3. thermal impedance for d 2 pak figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am15687v1 i d 1 0.1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 10 am15688v1 figure 6. safe operating area for to-220 figure 7. thermal impedance for to-220 i d 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am15689v1
docid024348 rev 3 7/20 stb13n80k5, stf13n80k5, STP13N80K5 electrical characteristics figure 8. output characteristics figure 9. transfer characteristics figure 10. normalized b vdss vs temperature figure 11. static drain-source on-resistance figure 12. gate charge vs gate-source voltage figure 13. capacitance variations i d 15 10 5 0 0 10 v ds (v) 20 (a) 5 15 20 25 6v 7v 8v v gs =11v 9v 30 10v am15690v1 i d 15 10 5 0 4 6 v gs (v) 8 (a) 5 7 20 25 30 v ds =20v 9 10 am15691v1 bv dss -100 t j (c) (norm) -50 50 0 100 0.85 0.9 0.95 1 1.05 i d =1ma 150 1.1 am15699v1 r ds(on) 0.3 0.2 0.1 0 2 6 i d (a) ( ) 4 8 0.4 0.5 0.6 v gs =10v 10 12 0.7 0.8 am15693v1 v gs 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 25 12 600 400 200 0 700 v ds v gs 300 500 100 30 am15692v1 c 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 1000 am15694v1
electrical characteristics stb13n80k5, stf13n80k5, STP13N80K5 8/20 docid024348 rev 3 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. output capacitance stored energy v gs(th) 0.6 0.4 0.2 0 -100 t j (c) (norm) -50 0.8 50 0 100 i d =100a 150 1 1.2 am15696v1 r ds(on) 2 1.5 1 0.5 -100 t j (c) (norm) -50 50 0 100 2.5 0 v gs =10v i d =6a 150 am15697v1 v sd 0 4 i sd (a) (v) 2 6 8 0.5 0.6 0.7 0.8 0.9 1 t j =-50c t j =150c t j =25c 10 am15698v1 e oss 6 4 2 0 0 100 v ds (v) (j) 400 8 200 300 10 12 500 600 700 800 am15695v1 figure 18. maximum avalanche energy vs. starting t j e as 0 40 t j (c) (mj) 20 100 60 80 0 20 40 60 80 120 140 100 120 140 am15700v1
docid024348 rev 3 9/20 stb13n80k5, stf13n80k5, STP13N80K5 test circuits 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive waveform figure 24. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data stb13n80k5, stf13n80k5, STP13N80K5 10/20 docid024348 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid024348 rev 3 11/20 stb13n80k5, stf13n80k5, STP13N80K5 package mechanical data table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data stb13n80k5, stf13n80k5, STP13N80K5 12/20 docid024348 rev 3 figure 25. d2pak (to-263) drawing figure 26. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3.50 5.08 1.60 footprint
docid024348 rev 3 13/20 stb13n80k5, stf13n80k5, STP13N80K5 package mechanical data table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data stb13n80k5, stf13n80k5, STP13N80K5 14/20 docid024348 rev 3 figure 27. to-220fp drawing 7012510_rev_k_b
docid024348 rev 3 15/20 stb13n80k5, stf13n80k5, STP13N80K5 package mechanical data table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data stb13n80k5, stf13n80k5, STP13N80K5 16/20 docid024348 rev 3 figure 28. to-220 type a drawing 0015988_typea_rev_s
docid024348 rev 3 17/20 stb13n80k5, stf13n80k5, STP13N80K5 packaging mechanical data 5 packaging mechanical data table 12. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
packaging mechanical data stb13n80k5, stf13n80k5, STP13N80K5 18/20 docid024348 rev 3 figure 29. tape figure 30. reel p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
docid024348 rev 3 19/20 stb13n80k5, stf13n80k5, STP13N80K5 revision history 6 revision history table 13. document revision history date revision changes 07-mar-2013 1 initial release. 27-mar-2013 2 updated figure 1: internal schematic diagram . minor text changes. document status promoted from preliminary data to production data. 15-apr-2013 3 ? modified: e as value, the entire typical values on table 5 , 6 and 7 ? inserted: section 2.1: electrical characteristics (curves) ? minor text changes
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